InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure
Zhian Ning,
Hailiang Dong,
Zhigang Jia,
Wei Jia,
Jian Liang,
Bingshe Xu
Affiliations
Zhian Ning
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of China
Hailiang Dong
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of China
Zhigang Jia
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of China
Wei Jia
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of China
Jian Liang
College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, People’s Republic of China
Bingshe Xu
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of China
A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device’s optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers.
