Data in Brief (Apr 2017)

Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell

  • Md. Asaduzzaman,
  • Ali Newaz Bahar,
  • Mohammad Maksudur Rahman Bhuiyan

DOI
https://doi.org/10.1016/j.dib.2017.02.020
Journal volume & issue
Vol. 11, no. C
pp. 296 – 300

Abstract

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The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc), short circuit current density Jsc, fill factor (FF), efficiency (η), and collection efficiency ηc have been analyzed.

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