Broadband All-Optical THz Modulator Based on Bi<sub>2</sub>Te<sub>3</sub>/Si Heterostructure Driven by UV-Visible Light
Yayan Xi,
Yixuan Zhou,
Xueqin Cao,
Jing Wang,
Zhen Lei,
Chunhui Lu,
Dan Wu,
Mingjian Shi,
Yuanyuan Huang,
Xinlong Xu
Affiliations
Yayan Xi
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Yixuan Zhou
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Xueqin Cao
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Jing Wang
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Zhen Lei
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Chunhui Lu
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Dan Wu
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Mingjian Shi
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Yuanyuan Huang
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
Xinlong Xu
Shaanxi Joint Laboratory of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi’an 710069, China
All-optical terahertz (THz) modulators have received tremendous attention due to their significant role in developing future sixth-generation technology and all-optical networks. Herein, the THz modulation performance of the Bi2Te3/Si heterostructure is investigated via THz time-domain spectroscopy under the control of continuous wave lasers at 532 nm and 405 nm. Broadband-sensitive modulation is observed at 532 nm and 405 nm within the experimental frequency range from 0.8 to 2.4 THz. The modulation depth reaches 80% under the 532 nm laser illumination with a maximum power of 250 mW and 96% under 405 nm illumination with a high power of 550 mW. The mechanism of the largely enhanced modulation depth is attributed to the construction of a type-II Bi2Te3/Si heterostructure, which could promote photogenerated electron and hole separation and increase carrier density dramatically. This work proves that a high photon energy laser can also achieve high-efficiency modulation based on the Bi2Te3/Si heterostructure, and the UV-Visible control laser may be more suitable for designing advanced all-optical THz modulators with micro-level sizes.