Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer
Meiwen Chen,
Shuxian Lv,
Boping Wang,
Pengfei Jiang,
Yuanxiang Chen,
Yaxin Ding,
Yuan Wang,
Yuting Chen,
Yan Wang
Affiliations
Meiwen Chen
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Shuxian Lv
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Boping Wang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Pengfei Jiang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Yuanxiang Chen
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Yaxin Ding
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Yuan Wang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Yuting Chen
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Yan Wang
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf0.5Zr0.5O2 thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent polarization reduction was observed in the capacitor with a laminated structure, the endurance characteristic was improved by two orders of magnitude (from 106 to 108 cycles). Moreover, the leakage current of the TiN/HZO/TiN capacitor with the laminated-structure interlayer was reduced by one order of magnitude. The reliability enhancement was proved by the Time-Dependent Dielectric Breakdown (TDDB) test, and the optimization results were attributed to the migration inhibition and nonuniform distribution of oxygen vacancies. Without additional materials and a complicated process, the laminated-structure method provides a feasible strategy for improving HZO device reliability.
