Achieving the ultra-broadband near-infrared La3SnGa5O14:Cr3+ phosphor via multiple lattice sites occupation for biological nondestructive detection and night-vision technology

Y. Shi; Z. Wang; J. Peng; Y. Wang; S. He; J. Li; R. Li; G. Wei; Y. Yang; P. Li

Materials Today Advances (Dec 2022)

Achieving the ultra-broadband near-infrared La3SnGa5O14:Cr3+ phosphor via multiple lattice sites occupation for biological nondestructive detection and night-vision technology

Y. Shi,
Z. Wang,
J. Peng,
Y. Wang,
S. He,
J. Li,
R. Li,
G. Wei,
Y. Yang,
P. Li

Affiliations

Y. Shi: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
Z. Wang: Corresponding author.; Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
J. Peng: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
Y. Wang: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
S. He: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
J. Li: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
R. Li: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
G. Wei: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
Y. Yang: Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China
P. Li: Corresponding author.; Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, China

Journal volume & issue: Vol. 16
p. 100305

Abstract

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Currently, near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have become a research hotspot, however, the NIR phosphors continue to face the problems of narrowband emission and poor thermal stability. Therefore, in order to solve these problems, La3SnGa5O14:xCr3+ phosphors with ultra-broadband NIR emission were obtained by multiple lattice sites occupation, featuring ultra-broadband emission in the range of 650–1300 nm with full width at half-maximum (FWHM) up to 333 nm under 437 nm excitation. By tuning the concentration of Cr3+, the FWHM value can reach 333–417 nm La3SnGa5O14:Cr3+ also exhibits favorable thermal stability, maintaining 90.5% and 67% of the initial intensity at 373 K and 423 K, respectively. The NIR pc-LEDs were manufactured by combining the blue light chip with La3SnGa5O14:Cr3+ phosphor. When the NIR pc-LED was switched off, no image could be generated from the infrared camera. Instead, the image captured by the infrared camera was visible in the light of the NIR pc-LED lamp. Such results imply that La3SnGa5O14:Cr3+ may be a prospective candidate for future biological accurate nondestructive detection and night-vision technology.

Published in Materials Today Advances

ISSN: 2590-0498 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-today-advances

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