High‐temperature energy storage dielectric with inhibition of carrier injection/migration based on band structure regulation
Guang Liu,
Qingquan Lei,
Yu Feng,
Changhai Zhang,
Tiandong Zhang,
Qingguo Chen,
Qingguo Chi
Affiliations
Guang Liu
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Qingquan Lei
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Yu Feng
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Changhai Zhang
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Tiandong Zhang
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Qingguo Chen
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Qingguo Chi
Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education Harbin University of Science and Technology Harbin People's Republic of China
Abstract Dielectric capacitors have a high power density, and are widely used in military and civilian life. The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures. In this study, a polycarbonate (PC)‐based energy storage dielectric was designed with BN/SiO2 heterojunctions on its surface. Based on this structural design, a synergistic suppression of the carrier injection and transport was achieved, significantly improving the insulating properties of the polymer film. In particular, the composite film achieves optimal high‐temperature energy‐storage properties. The composite film can withstand an electric field intensity of 760 MV m−1 at 100°C and obtain an energy storage density of 8.32 J cm−3, while achieving a breakthrough energy storage performance even at 150°C (610 MV m−1, 5.22 J cm−3). Through adjustment of the heterojunction structure, free adjustment of the insulation performance of the material can be realized; this is of great significance for the optimization of the material properties.
