Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Kuankuan Lu; Rihui Yao; Wei Xu; Honglong Ning; Xu Zhang; Guanguang Zhang; Yilin Li; Jinyao Zhong; Yuexin Yang; Junbiao Peng

doi:10.34133/2021/5758435

Research (Jan 2021)

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Kuankuan Lu,
Rihui Yao,
Wei Xu,
Honglong Ning,
Xu Zhang,
Guanguang Zhang,
Yilin Li,
Jinyao Zhong,
Yuexin Yang,
Junbiao Peng

Affiliations

Kuankuan Lu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Rihui Yao: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Wei Xu: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Honglong Ning: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Xu Zhang: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Guanguang Zhang: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Yilin Li: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Jinyao Zhong: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Yuexin Yang: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Junbiao Peng: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.34133/2021/5758435
Journal volume & issue: Vol. 2021

Abstract

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Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.

Published in Research

ISSN: 2096-5168 (Print); 2639-5274 (Online)
Publisher: American Association for the Advancement of Science (AAAS)
Country of publisher: United States
LCC subjects: Science
Website: https://spj.science.org/journal/research

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