Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment
Congzhi Bi,
Tianyu Wu,
Jingjing Shao,
Pengtao Jing,
Hai Xu,
Jilian Xu,
Wenxi Guo,
Yufei Liu,
Da Zhan
Affiliations
Congzhi Bi
Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China
Tianyu Wu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Jingjing Shao
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Pengtao Jing
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Hai Xu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Jilian Xu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Wenxi Guo
Department of Physics, College of Physical Science and Technology, Research Institution for Biomimetics and Soft Matter, Xiamen University, Xiamen 361005, China
Yufei Liu
Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Chongqing 400044, China
Da Zhan
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium’s electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice breaking. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, we made a remarkable observation: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.
