East European Journal of Physics (Sep 2024)

The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

  • Sirajidin S. Zainabidinov,
  • Khotamjon J. Mansurov,
  • Akramjon Y. Boboev,
  • Jakhongir N. Usmonov

DOI
https://doi.org/10.26565/2312-4334-2024-3-29
Journal volume & issue
no. 3
pp. 287 – 292

Abstract

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The I-V characteristics of heterostructures n-GaAs – p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ) exhibit a characteristic quadratic law - J~V2 I-V curve, followed by a sharp pre-breakdown current growth, which well explains the observed straight branch of the I-V characteristics and this regularity remains unchanged at different temperatures. The analysis of the I-V characteristics of n‑GaAs‑p‑(ZnSe)1‑x‑y(Ge2)x(GaAs1–δBiδ) heterostructures with an extended intermediate solid solution layer shows that the drift mechanism of charge transport predominates under forward bias conditions.

Keywords