Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko; A. Simic; Q. Gu; J. H. Lee; B. Slutsky; M. P. Nezhad; Y. Fainman

doi:10.1109/JPHOT.2011.2146763

IEEE Photonics Journal (Jan 2011)

Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko,
A. Simic,
Q. Gu,
J. H. Lee,
B. Slutsky,
M. P. Nezhad,
Y. Fainman

Affiliations

O. Bondarenko: <formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA
A. Simic: <formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula>Department of Physics, University of California, San Diego, La Jolla, CA, USA
Q. Gu: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA
J. H. Lee: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA
B. Slutsky: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA
M. P. Nezhad: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA
Y. Fainman: Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, USA

DOI: https://doi.org/10.1109/JPHOT.2011.2146763
Journal volume & issue: Vol. 3, no. 3
pp. 608 – 616

Abstract

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Light sources that are compatible with the silicon photonics platform are the key elements needed for photonic integrated circuits on silicon. Here, we report optically pumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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