DESIGN OF LOW POWER 8T SRAM WITH SCHMITT TRIGGER LOGIC

Abstract

Static Random Access Memory (SRAM) has become a key element in modern VLSI systems. In this paper, a low power design of 8 Transistor SRAM cell with Schmitt Trigger (ST) logic is proposed. The main intention of this paper is to design a new SRAM cell architecture to reduce the power consumption during both read / write operations and to improve SRAM access stability. The proposed design is simulated using 0.18 µm process technology and compared with conventional 6T cell. Simulation results show that the proposed memory cell achieves significant improvements in power consumption during read and write operations. It can retain data at a lower supply voltage of 300 mV. This new type of SRAM design can operate at a maximum frequency of 1 GHz at 1 V supply voltage. These qualities of the proposed design make it a best choice for high performance memory chips in the semiconductor industry where reliability and power consumption are of great interest.

Keywords

• VLSI
• Low power
• Memory
• SRAM
• Schmitt trigger