Burst-Mode 355 nm UV Laser Based on a QCW LD-Side-Pumped Electro-Optical Q-Switched Nd: YAG Laser

Haowen Guo; Chunyan Jia; Shuai Ye; Yongping Yao; Tiejun Ma; Jiayu Zhang; Meng Bai; Jinbao Xia; Hongkun Nie; Bo Yao; Jingliang He; Baitao Zhang

doi:10.3390/photonics11111071

Photonics (Nov 2024)

Burst-Mode 355 nm UV Laser Based on a QCW LD-Side-Pumped Electro-Optical Q-Switched Nd: YAG Laser

Haowen Guo,
Chunyan Jia,
Shuai Ye,
Yongping Yao,
Tiejun Ma,
Jiayu Zhang,
Meng Bai,
Jinbao Xia,
Hongkun Nie,
Bo Yao,
Jingliang He,
Baitao Zhang

Affiliations

Haowen Guo: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Chunyan Jia: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Shuai Ye: Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China
Yongping Yao: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Tiejun Ma: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Jiayu Zhang: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Meng Bai: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Jinbao Xia: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Hongkun Nie: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Bo Yao: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Jingliang He: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Baitao Zhang: State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

DOI: https://doi.org/10.3390/photonics11111071
Journal volume & issue: Vol. 11, no. 11
p. 1071

Abstract

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In this paper, a high-repetition-rate, high-peak-power burst-mode nanosecond 355 nm UV laser was demonstrated. A quasi-continuous wave (QCW) laser diode (LD) side-pumped electro-optical (EO) Q-switched burst-mode Nd: YAG laser was performed as the fundamental laser source. Under the pumping duration of 250 μs and a burst repetition rate of 100 Hz, the pulse energy of 20 kHz burst-mode UV laser reached 5.3 mJ with a single pulse energy of 1.325 mJ, pulse width of 68 ns, resulting in a peak power of 19.49 kW. The as-generated millijoule burst-mode UV laser has great potential for high-end processing of laser lift-off, annealing and slicing in display semiconductor fields.

Published in Photonics

ISSN: 2304-6732 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: http://www.mdpi.com/journal/photonics

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