Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 nm

Jianguo Zhao; Jiangyong Pan; Bin Liu; Tao Tao; Daihua Chen; Xianjian Long; Zhe Chuan Feng; Jianhua Chang

doi:10.1109/JPHOT.2020.3039897

IEEE Photonics Journal (Jan 2021)

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 nm

Jianguo Zhao,
Jiangyong Pan,
Bin Liu,
Tao Tao,
Daihua Chen,
Xianjian Long,
Zhe Chuan Feng,
Jianhua Chang

Affiliations

Jianguo Zhao: ORCiD; School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing, China
Jiangyong Pan: School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing, China
Bin Liu: ORCiD; School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Tao Tao: ORCiD; School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Daihua Chen: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning, Guangxi, China
Xianjian Long: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning, Guangxi, China
Zhe Chuan Feng: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning, Guangxi, China
Jianhua Chang: ORCiD; School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2020.3039897
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 7

Abstract

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The optical properties of nonpolar AlGaN multiple quantum wells (MQWs) emitting at 280 nm were investigated intensively using temperature-dependent and time-resolved photoluminescence spectra associated with the characterization of structural properties. The densities of superficial pits and basal-plane stacking faults (BSFs) were reduced by 33.8% and 35.9%, respectively, for nonpolar AlGaN MQWs due to the carefully optimized dual nitridation. It was found that the nonpolar MQWs emission can be significantly improved by reducing the BSFs density as the BSFs emission was the main competing channels. Moreover, an internal quantum efficiency of 39% for nonpolar Al0.43Ga0.57N MQWs at emission wavelength of 279 nm was achieved even the full width at half maximum values of X-ray rocking curves were 0.565° for c-direction and 0.797° for m-direction. This fact means that a highly efficient deep ultraviolet light sources can be expected by means of nonpolar AlGaN due to the elimination of quantum confined Stark effect induced the decrease in radiative lifetime.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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