Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO<sub>3</sub> Nanofibers for Future Resistive Random-Access Memory Applications
Quanli Hu,
Hanqiong Luo,
Chao Song,
Yin Wang,
Bin Yue,
Jinghai Liu
Affiliations
Quanli Hu
Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, China
Hanqiong Luo
Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, China
Chao Song
Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, China
Yin Wang
Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, China
Bin Yue
Department of Chemistry, Tonghua Normal University, Tonghua 134002, China
Jinghai Liu
Inner Mongolia Key Lab of Solid State Chemistry for Battery, Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage, College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao 028000, China
In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO3, NdCoO3, and SmCoO3 are typical rare-earth cobaltates (RCoO3). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO3 structure. The oxygen vacancies in RCoO3 are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO3/Pt. The electronic properties of RCoO3 were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO3, NdCoO3, and SmCoO3 in memory storage devices.
