Growth and Characterization of GaN/In<i><sub>x</sub></i>Ga<sub>1−<i>x</i></sub>N/In<i><sub>y</sub></i>Al<sub>1−<i>y</i></sub>N Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
Huei-Jyun Shih,
Ikai Lo,
Ying-Chieh Wang,
Cheng-Da Tsai,
Yu-Chung Lin,
Yi-Ying Lu,
Hui-Chun Huang
Affiliations
Huei-Jyun Shih
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Ikai Lo
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Ying-Chieh Wang
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Cheng-Da Tsai
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Yu-Chung Lin
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Yi-Ying Lu
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Hui-Chun Huang
Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1−xN QW in photoluminescence measurement was estimated to be 2.89 eV and the indium concentration (x) was 14.8%. In X-ray photoelectric spectroscopy, we obtained an indium concentration (y) in the InyAl1−yN barrier of 25.9% and the band-offset was estimated to be 4.31 eV. From the atomic layer measurements from high-resolution transmission electron microscopy, the lattice misfit between the InxGa1−xN QW and InyAl1−yN barrier was 0.71%. The lattice-matched InxGa1−xN/InyAl1−yN QWs can therefore be evaluated from the band profiles of III-nitrides for engineering of full-visible-light emitting diode in optoelectronic application.
