Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Yang Liu; Bo Zhang; Yinian Feng; Xiaolin Lv; Dongfeng Ji; Zhongqian Niu; Yilin Yang; Xiangyang Zhao; Yong Fan

doi:10.3390/app10217924

Applied Sciences (Nov 2020)

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Yang Liu,
Bo Zhang,
Yinian Feng,
Xiaolin Lv,
Dongfeng Ji,
Zhongqian Niu,
Yilin Yang,
Xiangyang Zhao,
Yong Fan

Affiliations

Yang Liu: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Bo Zhang: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Yinian Feng: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Xiaolin Lv: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Dongfeng Ji: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Zhongqian Niu: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Yilin Yang: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Xiangyang Zhao: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050000, China
Yong Fan: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

DOI: https://doi.org/10.3390/app10217924
Journal volume & issue: Vol. 10, no. 21
p. 7924

Abstract

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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