APL Materials (Jan 2024)

Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

  • Sushma Raghuvansy,
  • Jon P. McCandless,
  • Marco Schowalter,
  • Alexander Karg,
  • Manuel Alonso-Orts,
  • Martin S. Williams,
  • Christian Tessarek,
  • Stephan Figge,
  • Kazuki Nomoto,
  • Huili Grace Xing,
  • Darrell G. Schlom,
  • Andreas Rosenauer,
  • Debdeep Jena,
  • Martin Eickhoff,
  • Patrick Vogt

DOI
https://doi.org/10.1063/5.0192370
Journal volume & issue
Vol. 12, no. 1
pp. 019902 – 019902-2

Abstract

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