Light-controlled resistive switching of ZnWO4 nanowires array

W. X. Zhao; B. Sun; Y. H. Liu; L. J. Wei; H. W. Li; P. Chen

doi:10.1063/1.4891461

AIP Advances (Jul 2014)

Light-controlled resistive switching of ZnWO4 nanowires array

W. X. Zhao,
B. Sun,
Y. H. Liu,
L. J. Wei,
H. W. Li,
P. Chen

Affiliations

W. X. Zhao: School of Physics Science and Technology, Southwest University, Chongqing 400715, China
B. Sun: School of Physics Science and Technology, Southwest University, Chongqing 400715, China
Y. H. Liu: School of Physics Science and Technology, Southwest University, Chongqing 400715, China
L. J. Wei: School of Physics Science and Technology, Southwest University, Chongqing 400715, China
H. W. Li: School of Physics Science and Technology, Southwest University, Chongqing 400715, China
P. Chen: School of Physics Science and Technology, Southwest University, Chongqing 400715, China

DOI: https://doi.org/10.1063/1.4891461
Journal volume & issue: Vol. 4, no. 7
pp. 077127 – 077127-7

Abstract

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ZnWO4 nanowires array was prepared on the titanium substrate by a facile hydrothermal synthesis, in which the average length of ZnWO4 nanowires is about 2um and the diameter of individual ZnWO4 nanowire ranges from 50 to 70 nm. The bipolar resistive switching effect of ZnWO4 nanowires array was observed. Moreover, the performance of the resistive switching device is greatly improved under white light irradiation compared with that in the dark.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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