Study the hall effect and DC conductivity of CdSe and Te doped CdSe thin films prepared by RF magnetron sputtering method

Abstract

CdSe and CdSe:Te thin films were grown on Si p-type substrates by RF magnetron sputtering method. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The results show that after the doping of Te in the CdSe thin film, the conductivity changes from n-type to p-type and the mobility of the CdSe thin film increased. The conductivity of Te doped CdSe was found to be in order of 10−6 Ω−1 cm−1, while without doping it was 10−5 Ω−1 cm−1. X-ray diffraction (XRD) confirmed the presence of CdSe, Te and Si.