Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Abstract

Abstract This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.

Keywords

• Plasma induced damage
• Advanced FinFET technology
• Detection range