Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations
Kevkić Tijana S.,
Nikolić Vojkan R.,
Stojanović Vladica S.,
Milosavljević Dragana D.,
Jovanović Slavica J.
Affiliations
Kevkić Tijana S.
University of Priština in Kosovska Mitrovica, Faculty of Sciences and Mathematics, Department of Physics, Lole Ribara 29, 38 220 Kosovska Mitrovica, Republic of Serbia
Nikolić Vojkan R.
Department of Informatics, University of the Criminal Investigation and Police Studies, Cara Dušana 156, 11 000 Belgrade, Serbia
Stojanović Vladica S.
Department of Informatics, University of the Criminal Investigation and Police Studies, Cara Dušana 156, 11 000 Belgrade, Serbia
Milosavljević Dragana D.
University of Priština in Kosovska Mitrovica, Faculty of Sciences and Mathematics, Department of Physics, Lole Ribara 29, 38 220 Kosovska Mitrovica, Republic of Serbia
Jovanović Slavica J.
University of Priština in Kosovska Mitrovica, Faculty of Sciences and Mathematics, Department of Physics, Lole Ribara 29, 38 220 Kosovska Mitrovica, Republic of Serbia
Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results.
