AIP Advances (Oct 2014)

Resistive switching in polycrystalline YMnO3 thin films

  • A. Bogusz,
  • A. D. Müller,
  • D. Blaschke,
  • I. Skorupa,
  • D. Bürger,
  • A. Scholz,
  • O. G. Schmidt,
  • H. Schmidt

DOI
https://doi.org/10.1063/1.4899188
Journal volume & issue
Vol. 4, no. 10
pp. 107135 – 107135-7

Abstract

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We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.