A Blueprint for the Synthesis and Characterization of Thiolated Graphene
Maxim K. Rabchinskii,
Victor V. Sysoev,
Sergei A. Ryzhkov,
Ilya A. Eliseyev,
Dina Yu. Stolyarova,
Grigorii A. Antonov,
Nikolai S. Struchkov,
Maria Brzhezinskaya,
Demid A. Kirilenko,
Sergei I. Pavlov,
Mihail E. Palenov,
Maxim V. Mishin,
Olga E. Kvashenkina,
Pavel G. Gabdullin,
Alexey S. Varezhnikov,
Maksim A. Solomatin,
Pavel N. Brunkov
Affiliations
Maxim K. Rabchinskii
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Victor V. Sysoev
Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia
Sergei A. Ryzhkov
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Ilya A. Eliseyev
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Dina Yu. Stolyarova
National Research Centre “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia
Grigorii A. Antonov
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Nikolai S. Struchkov
Center for Probe Microscopy and Nanotechnology, National Research University of Electronic Technology, Bld. 1, Shokin Square, 124498 Moscow, Russia
Maria Brzhezinskaya
Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Demid A. Kirilenko
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Sergei I. Pavlov
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Mihail E. Palenov
Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia
Maxim V. Mishin
Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia
Olga E. Kvashenkina
Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia
Pavel G. Gabdullin
Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia
Alexey S. Varezhnikov
Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia
Maksim A. Solomatin
Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia
Pavel N. Brunkov
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.