CdSe electrodeposition on n-Si (100) substrate was investigated in sulfuric acid solution. The behaviour and the deposition of the precursors (Cd and Se) were studied separately at first. Then, we explored both the alternated deposition, one layer by one, as well as the simultaneous co-deposition of the two elements to form the CdSe semiconductor. Varying the deposition conditions, we were able to obtain nanoparticles, or a thin film, on the surface of the electrode. The samples were then characterised microscopically and spectroscopically with SEM, XRD and XPS. Finally, we evaluated the induced photoemission of the deposit for the application in optoelectronics.
