Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Hari P. Nair; Yang Liu; Jacob P. Ruf; Nathaniel J. Schreiber; Shun-Li Shang; David J. Baek; Berit H. Goodge; Lena F. Kourkoutis; Zi-Kui Liu; Kyle M. Shen; Darrell G. Schlom

doi:10.1063/1.5023477

APL Materials (Apr 2018)

Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Hari P. Nair,
Yang Liu,
Jacob P. Ruf,
Nathaniel J. Schreiber,
Shun-Li Shang,
David J. Baek,
Berit H. Goodge,
Lena F. Kourkoutis,
Zi-Kui Liu,
Kyle M. Shen,
Darrell G. Schlom

Affiliations

Hari P. Nair: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Yang Liu: Department of Physics, Cornell University, Ithaca, New York 14853, USA
Jacob P. Ruf: Department of Physics, Cornell University, Ithaca, New York 14853, USA
Nathaniel J. Schreiber: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Shun-Li Shang: Department of Materials Science and Engineering, The Pennsylvania State University, University Park 16802, Pennsylvania, USA
David J. Baek: School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Berit H. Goodge: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Lena F. Kourkoutis: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Zi-Kui Liu: Department of Materials Science and Engineering, The Pennsylvania State University, University Park 16802, Pennsylvania, USA
Kyle M. Shen: Department of Physics, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

DOI: https://doi.org/10.1063/1.5023477
Journal volume & issue: Vol. 6, no. 4
pp. 046101 – 046101-11

Abstract

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Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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