High-current density terahertz resonant runneling diodes grown by MOCVD

Che Xianghui; Liang Shixiong; Zhang Lisen; Gu Guodong; Hao Wenjia; Yang Dabao; Chen Hongtai; Feng Zhihong

doi:10.16157/j.issn.0258-7998.199803

Dianzi Jishu Yingyong (Aug 2019)

High-current density terahertz resonant runneling diodes grown by MOCVD

Che Xianghui,
Liang Shixiong,
Zhang Lisen,
Gu Guodong,
Hao Wenjia,
Yang Dabao,
Chen Hongtai,
Feng Zhihong

Affiliations

Che Xianghui: National Key Laboratory of ASIC，The 13th Research Institute of China Electronics Technology Group Corporation， Shijiazhuang 050051，China
Liang Shixiong: National Key Laboratory of ASIC，The 13th Research Institute of China Electronics Technology Group Corporation， Shijiazhuang 050051，China
Zhang Lisen: National Key Laboratory of ASIC，The 13th Research Institute of China Electronics Technology Group Corporation， Shijiazhuang 050051，China
Gu Guodong: National Key Laboratory of ASIC，The 13th Research Institute of China Electronics Technology Group Corporation， Shijiazhuang 050051，China
Hao Wenjia: The 13th Research Institute of China Electronics Technology Group Corporation，Shijiazhuang 050051，China
Yang Dabao: The 13th Research Institute of China Electronics Technology Group Corporation，Shijiazhuang 050051，China
Chen Hongtai: The 13th Research Institute of China Electronics Technology Group Corporation，Shijiazhuang 050051，China
Feng Zhihong: National Key Laboratory of ASIC，The 13th Research Institute of China Electronics Technology Group Corporation， Shijiazhuang 050051，China

DOI: https://doi.org/10.16157/j.issn.0258-7998.199803
Journal volume & issue: Vol. 45, no. 8
pp. 32 – 33

Abstract

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AlAs/InGaAs/AlAs resonant tunneling materials was optimized, and terahertz resonant tunneling diodes grown by MOCVD is first fabricated. The epitaxial layers of the RTD were grown on semi-insulating InP substrate. InP-based RTD were fabricated by using contact lithography and air bridge technology.The electrical characteristics of the device were tested at room temperature. The peak current density of our RTD exceeded 400 kA/cm2, and the peak to valley current ratio of our RTD was 2.4.

Published in Dianzi Jishu Yingyong

ISSN: 0258-7998 (Print)
Publisher: National Computer System Engineering Research Institute of China
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: http://journal.chinaaet.com/en

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