Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure

Abstract

SiC based pressure sensors show tremendous promise for harsh environment applications thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper presents the design, fabrication, and characterisation of a highly sensitive and robust 3C-SiC/Si pressure sensor. The sensor utilises a stress amplification structure consisting of four Si pillars built up from the 3C-SiC/Si membrane, supporting a series of released n-type 3C-SiC sensing elements. When pressure is applied to the diaphragm, the pillars act to locally concentrate and amplify strain in the 3C-SiC sensing elements, resulting in over 7 times higher stresses/strains in these sensing elements compared to a traditional structure. Additionally, the front side of the sensor is fully covered by a 3C-SiC thin film, which provides a strong chemical protective capability, allowing the sensor to operate in harsh chemically corrosive environments. The robust device utilises the full Wheatstone bridge to negate the effects of temperature. Experimental results show that the fabricated sensor is highly stable, repeatable, has a high sensitivity of 0.276 mV/V/kPa and a maximum non-linearity of 2.2 % in the 0–100 kPa region. The results indicate that this smart-structure pressure sensor is promising for applications that require highly precise pressure sensing in aggressively corrosive environments.

Keywords

• Pressure Sensor
• Piezoresistive effect
• Stress amplification
• SiC