Self-organization in irradiated semiconductor crystals caused by thermal annealing

Abstract

Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (conductivity σ, carrier concentration n and mobility µ) as well as the positron life-time τ were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.

Keywords

• gallium phosphate
• defects
• electron irradiation
• self-organization
• annealing.