Current-induced Néel order switching facilitated by magnetic phase transition

Hao Wu; Hantao Zhang; Baomin Wang; Felix Groß; Chao-Yao Yang; Gengfei Li; Chenyang Guo; Haoran He; Kin Wong; Di Wu; Xiufeng Han; Chih-Huang Lai; Joachim Gräfe; Ran Cheng; Kang L. Wang

doi:10.1038/s41467-022-29170-2

Nature Communications (Mar 2022)

Current-induced Néel order switching facilitated by magnetic phase transition

Hao Wu,
Hantao Zhang,
Baomin Wang,
Felix Groß,
Chao-Yao Yang,
Gengfei Li,
Chenyang Guo,
Haoran He,
Kin Wong,
Di Wu,
Xiufeng Han,
Chih-Huang Lai,
Joachim Gräfe,
Ran Cheng,
Kang L. Wang

Affiliations

Hao Wu: Department of Electrical and Computer Engineering, University of California
Hantao Zhang: Department of Electrical and Computer Engineering, University of California
Baomin Wang: School of Physical Science and Technology, Ningbo University
Felix Groß: Max Planck Institute for Intelligent Systems
Chao-Yao Yang: Department of Materials Science and Engineering, National Tsing Hua University
Gengfei Li: CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Chenyang Guo: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Haoran He: Department of Electrical and Computer Engineering, University of California
Kin Wong: Department of Electrical and Computer Engineering, University of California
Di Wu: Department of Electrical and Computer Engineering, University of California
Xiufeng Han: Songshan Lake Materials Laboratory
Chih-Huang Lai: Department of Materials Science and Engineering, National Tsing Hua University
Joachim Gräfe: Max Planck Institute for Intelligent Systems
Ran Cheng: Department of Electrical and Computer Engineering, University of California
Kang L. Wang: Department of Electrical and Computer Engineering, University of California

DOI: https://doi.org/10.1038/s41467-022-29170-2
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 7

Abstract

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Electrical manipulation of antiferromagnetic order is crucial for future memory devices, but existing switching schemes require a large current density. Here, the authors achieve record low current density switching in FeRh by taking advantage of its antiferromagnetic to ferromagnetic phase transition.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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