TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus

Abstract

In the present work, we develop a model for simulating an ultrathin body (10nm) and buried oxide (20nm) fully-depleted silicon-on-insulator MOSFET with SiO2 gate oxide (5nm) by using TCAD-Sentaurus software. We performed DC-simulations for studying the behavior of the threshold voltage and the transconductance. Furthermore, AC-simulations were performed for studying the inversion capacitance and the inversion charge. We compare our results with similar simulations carried out in a previous work in which COMSOL-Multiphysics software was used. We have obtained similar results in both works. However, Sentaurus features more interesting details like introducing a more realistic picture of the physical mechanisms of such complex devices.

Keywords

• SOI-MOSFET
• simulación TCAD
• Sentaurus
• ecuación de Poisson
• ecuaciones de difusión y deriva