Interfacial charge and energy transfer in van der Waals heterojunctions
Zehua Hu,
Xue Liu,
Pedro Ludwig Hernández‐Martínez,
Shishu Zhang,
Peng Gu,
Wei Du,
Weigao Xu,
Hilmi Volkan Demir,
Haiyun Liu,
Qihua Xiong
Affiliations
Zehua Hu
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences Nanyang Technological University Singapore Singapore
Xue Liu
Institutes of Physical Science and Information Technology Anhui University Hefei P.R. China
Pedro Ludwig Hernández‐Martínez
LUMINOUS! Center of Excellence for Semiconductor Lighting and Display, School of Electrical and Electronics Engineering Nanyang Technological University Singapore Singapore
Shishu Zhang
State Key Laboratory of Low‐Dimensional Quantum Physics, Department of Physics Tsinghua University Beijing P.R. China
Peng Gu
Beijing Academy of Quantum Information Sciences Beijing P.R. China
Wei Du
Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou P.R. China
Weigao Xu
Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering Nanjing University Nanjing P.R. China
Hilmi Volkan Demir
LUMINOUS! Center of Excellence for Semiconductor Lighting and Display, School of Electrical and Electronics Engineering Nanyang Technological University Singapore Singapore
Haiyun Liu
Beijing Academy of Quantum Information Sciences Beijing P.R. China
Qihua Xiong
State Key Laboratory of Low‐Dimensional Quantum Physics, Department of Physics Tsinghua University Beijing P.R. China
Abstract Van der Waals heterojunctions are fast‐emerging quantum structures fabricated by the controlled stacking of two‐dimensional (2D) materials. Owing to the atomically thin thickness, their carrier properties are not only determined by the host material itself, but also defined by the interlayer interactions, including dielectric environment, charge trapping centers, and stacking angles. The abundant constituents without the limitation of lattice constant matching enable fascinating electrical, optical, and magnetic properties in van der Waals heterojunctions toward next‐generation devices in photonics, optoelectronics, and information sciences. This review focuses on the charge and energy transfer processes and their dynamics in transition metal dichalcogenides (TMDCs), a family of quantum materials with strong excitonic effects and unique valley properties, and other related 2D materials such as graphene and hexagonal‐boron nitride. In the first part, we summarize the ultrafast charge transfer processes in van der Waals heterojunctions, including its experimental evidence and theoretical understanding, the interlayer excitons at the TMDC interfaces, and the hot carrier injection at the graphene/TMDCs interface. In the second part, the energy transfer, including both Förster and Dexter types, are reviewed from both experimental and theoretical perspectives. Finally, we highlight the typical charge and energy transfer applications in photodetectors and summarize the challenges and opportunities for future development in this field.
