Trimethyl(phenyl)silane — a precursor for gas phase processes of SiCx:H film deposition: Synthesis and characterization

Abstract

The technique of synthesis and purification of trimethyl(phenyl)silane PhSiMe3, allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si was developed. IR, UV and 1H NMR-spectroscopic studies were used to define its spectral characteristics. Complex thermal analysis and thermogravimetry defined thermoanalytical behavior of PhSiMe3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD). The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determined by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimal conditions of film deposition. The possibility of using trimethyl(phenyl)silane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated.

Keywords

• Trimethyl(phenyl)-silane
• PECVD
• Dielectric films
• Hydrogenated silicon carbonitride