Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Abstract

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

Keywords

• dual radio frequency
• inductive coupled plasma jet
• single crystal diamond
• chemical vapor deposition (CVD)
• methane flux
• growth rate