Tailoring a Back‐Contact Barrier for a Self‐Powered Broadband Kesterite Photodetector With Ultralow Dark Current Enabling Ultra‐Weak‐Light Detection
Qianfeng Wu,
Chuanhao Li,
Shuo Chen,
Zhenghua Su,
Muhammad Abbas,
Chao Chen,
Qianqian Lin,
Jingting Luo,
Liming Ding,
Guangxing Liang
Affiliations
Qianfeng Wu
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Chuanhao Li
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Shuo Chen
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Zhenghua Su
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Muhammad Abbas
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Chao Chen
Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI) Huazhong University of Science and Technology Wuhan China
Qianqian Lin
Key Lab of Artificial Micro‐ and Nano‐Structures of Ministry of Education of China, Hubei Luojia Laboratory, School of Physics and Technology Wuhan University Wuhan China
Jingting Luo
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
Liming Ding
School of Chemical Engineering and Light Industry Guangdong University of Technology Guangzhou China
Guangxing Liang
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China
ABSTRACT Visible and near‐infrared photodetectors are widely used in intelligent driving, health monitoring, and other fields. However, the application of photodetectors in the near‐infrared region is significantly impacted by high dark current, which can greatly reduce their performance and sensitivity, thereby limiting their effectiveness in certain applications. In this work, the introduction of a C60 back interface layer successfully mitigated back interface reactions to decrease the thickness of the Mo(S,Se)2 layer, tailoring the back‐contact barrier and preventing reverse charge injection, resulting in a kesterite photodetector with an ultralow dark current density of 5.2 × 10−9 mA/cm2 and ultra‐weak‐light detection at levels as low as 25 pW/cm2. Besides, under a self‐powered operation, it demonstrates outstanding performance, achieving a peak responsivity of 0.68 A/W, a wide response range spanning from 300 to 1600 nm, and an impressive detectivity of 5.27 × 1014 Jones. In addition, it offers exceptionally rapid response times, with rise and decay times of 70 and 650 ns, respectively. This research offers important insights for developing high‐performance self‐powered near‐infrared photodetectors that have high responsivity, rapid response times, and ultralow dark current.
