Nanoscale Research Letters (Jan 2011)

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

  • Li DB,
  • Shi K,
  • Song HP,
  • Guo Y,
  • Wang J,
  • Xu XQ,
  • Liu JM,
  • Yang AL,
  • Wei HY,
  • Zhang B,
  • Yang SY,
  • Liu XL,
  • Zhu QS,
  • Wang ZG

Journal volume & issue
Vol. 6, no. 1
p. 50

Abstract

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Abstract Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.

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