Erratum: “Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor” [AIP Adv. 13, 065006 (2023)]
Laixiang Qin,
Chunlai Li,
Yiqun Wei,
Ziang Xie,
Jin He
Affiliations
Laixiang Qin
Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen 518057, People’s Republic of China
Chunlai Li
Shenzhen Institute of Peking University, Shenzhen 518057, People’s Republic of China
Yiqun Wei
Shenzhen Institute of Peking University, Shenzhen 518057, People’s Republic of China
Ziang Xie
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China
Jin He
Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen 518057, People’s Republic of China
