AIP Advances (Jul 2013)

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

  • Qi Wang,
  • Zhigang Jia,
  • Xiaomin Ren,
  • Yingce Yan,
  • Zhiqiang Bian,
  • Xia Zhang,
  • Shiwei Cai,
  • Yongqing Huang

DOI
https://doi.org/10.1063/1.4815971
Journal volume & issue
Vol. 3, no. 7
pp. 072111 – 072111

Abstract

Read online

In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.