An Amorphous (Al_0.12Ga_0.88)₂O₃ Deep Ultraviolet Photodetector

Abstract

The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With -10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23 × 10-9 A and 59.51 dB, respectively. With the same -10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λillumination = 230 nm and -5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D*) of the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector were 9.94 × 10-11 W and 2.11 × 1010 cmHz1/2W-1, respectively. These results suggest the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector herein indicate a cost-effective solution for developing DUV photodetector applications.

Keywords

• $(\text{Al}_{\text{x}}\text{Ga}_{\text{1-x}})_{2}\text{O}_{3}$ %22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> <named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$(\text{Al}_{\text{x}}\text{Ga}_{\text{1-x}})_{2}\text{O}_{3}$</tex-math> </inline-formula> </named-content>
• wide-bandgap material
• deep UV photodetector
• amorphous