Nature Communications (Jan 2021)

Tunnel field-effect transistors for sensitive terahertz detection

  • I. Gayduchenko,
  • S. G. Xu,
  • G. Alymov,
  • M. Moskotin,
  • I. Tretyakov,
  • T. Taniguchi,
  • K. Watanabe,
  • G. Goltsman,
  • A. K. Geim,
  • G. Fedorov,
  • D. Svintsov,
  • D. A. Bandurin

DOI
https://doi.org/10.1038/s41467-020-20721-z
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 8

Abstract

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Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.