Конденсированные среды и межфазные границы (Mar 2023)

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

  • Pavel V. Seredin,
  • Nikolay A. Kurilo,
  • Obaid Radam Ali,
  • Nikita S. Buylov,
  • Dmitry L. Goloshchapov,
  • Sergey Alexandrovich Ivkov,
  • Alexandr S. Lenshin,
  • Ivan N. Arsentyev,
  • Alexey V. Nashchekin,
  • Shukrilo Sh. Sharofidinov,
  • Andrey M. Mizerov,
  • Maksim S. Sobolev,
  • Evgeniy V. Pirogov,
  • Igor V. Semeykin

DOI
https://doi.org/10.17308/kcmf.2023.25/10978
Journal volume & issue
Vol. 25, no. 1

Abstract

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In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film. It was found that selected technological conditions for the performed chloride-hydride epitaxy let us obtain the samples of structurally qualitative semi-polar wurtzite gallium nitride with (11¯22) orientation on m-sapphire. Using a set of structural and spectral methods of analysis the structural, morphological, and optical properties of the films were studied and the value of residual bi-axial stresses was determined. A complex of the obtained results means a high structural and optical quality of the epitaxial gallium nitride film. Optimization of the applied technological technique in the future can be a promising approach for the growth of the qualitative GaN structures on m-sapphire substrates.

Keywords