Solution-processed MAPbI3/Cs2AgBiBr6 heterostructure through epitaxial growth for broadband photo-detection
Mengrou Wang,
Yubing Xu,
Xin Wang,
Yuwei Li,
Jingda Zhao,
Yuzhu Pan,
Jing Chen,
Qing Li,
Zhiwei Zhao,
Jun Wu,
Wei Lei
Affiliations
Mengrou Wang
State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, China Nuclear Power Engineering Co. Ltd., Shenzhen, Guangdong 518172, China
Yubing Xu
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Xin Wang
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Yuwei Li
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Jingda Zhao
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Yuzhu Pan
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Jing Chen
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Qing Li
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Zhiwei Zhao
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Jun Wu
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
Wei Lei
School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
All-inorganic halide semiconductors with perovskite or perovskite-like structure have aroused a widespread concern recently for its environmental friendliness and stabilities while possessing excellent optoelectronic properties. Double perovskite Cs2AgBiBr6 single crystal (SC) is one of the most representative materials in the latest research area. To further improve the device response range and decrease its dark current density effectively, functional layers based on the solution-processed epitaxial method are normally fabricated as heterojunctions. Herein, a novel idea of a broadband heterojunction MAPbI3 (MA = CH3NH3)/Cs2AgBiBr6 is proposed in this work to achieve this goal. A MAPbI3 layer is fabricated on Cs2AgBiBr6 SC substrates through immersing Cs2AgBiBr6 SC into MAPbI3 solution at a MAPbI3 crystallization temperature. Ultimately, this heterojunction device expands the absorption limit from 618 to 838 nm, makes responsivity range redshift from 629 to 860 nm, and achieves a responsivity of 16.8 mA W−1 while the detectivity of 1.33 × 1011 Jones under 622 nm 0.55 mW cm−2 illumination at −20 V bias, maintaining excellent optoelectronic properties.
