This paper discusses the alternating-current (AC) and direct-current (DC) characteristics of Trigate FinFETs. A modified non linear DC model is proposed to predict $I-V$ characteristics with effect of an efficient technique for the extraction of AC small signal parameters. The extraction of small signal parameters using S-measurements can be developed on advance design system (ADS) software which is based on the electrical behavior of the device. It examines the electrical response as it depends on bias voltages and the extrinsic and intrinsic parameters of Si FinFETs. The approaches discussed here are valid over a range of frequency starting from few Hz up to several tens of GHz. In this paper equivalent circuit procedure has been adopted to compute device AC parameters based on its measured AC response. The characteristics were then simulated by developing a Matlab code based on particle swam optimization (PSO) technique and compared with technology computer aided design (TCAD) data. The results shows that the good agreement are achieved between simulated and TCAD data.
