Design and Simulation of Efficient SnS-Based Solar Cell Using Spiro-OMeTAD as Hole Transport Layer

Pooja Tiwari; Maged F. Alotaibi; Yas Al-Hadeethi; Vaibhava Srivastava; Bassim Arkook; Sadanand; Pooja Lohia; Dilip Kumar Dwivedi; Ahmad Umar; Hassan Algadi; Sotirios Baskoutas

doi:10.3390/nano12142506

Nanomaterials (Jul 2022)

Design and Simulation of Efficient SnS-Based Solar Cell Using Spiro-OMeTAD as Hole Transport Layer

Pooja Tiwari,
Maged F. Alotaibi,
Yas Al-Hadeethi,
Vaibhava Srivastava,
Bassim Arkook,
Sadanand,
Pooja Lohia,
Dilip Kumar Dwivedi,
Ahmad Umar,
Hassan Algadi,
Sotirios Baskoutas

Affiliations

Pooja Tiwari: Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Maged F. Alotaibi: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Yas Al-Hadeethi: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Vaibhava Srivastava: Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Bassim Arkook: Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Sadanand: Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Pooja Lohia: Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Dilip Kumar Dwivedi: Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malviya University of Technology, Gorakhpur 273010, India
Ahmad Umar: Department of Chemistry, College of Science and Arts, Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, Najran 11001, Saudi Arabia
Hassan Algadi: Department of Electrical Engineering, College of Engineering, Najran University, Najran 11001, Saudi Arabia
Sotirios Baskoutas: Department of Materials Science, University of Patras, 26504 Patras, Greece

DOI: https://doi.org/10.3390/nano12142506
Journal volume & issue: Vol. 12, no. 14
p. 2506

Abstract

Read online

In the present paper, the theoretical investigation of the device structure ITO/CeO2/SnS/Spiro-OMeTAD/Mo of SnS-based solar cell has been performed. The aim of this work is to examine how the Spiro-OMeTAD HTL affects the performance of SnS-based heterostructure solar cell. Using SCAPS-1D simulation software, various parameters of SnS-based solar cell such as work function, series and shunt resistance and working temperature have been investigated. With the help of Spiro-OMeTAD, the suggested cell’s open-circuit voltage was increased to 344 mV. The use of Spiro-OMeTAD HTL in the SnS-based solar cell resulted in 14% efficiency increase, and the proposed heterojunction solar cell has 25.65% efficiency. The cell’s performance is determined by the carrier density and width of the CeO2 ETL (electron transport layer), SnS absorber layer and Spiro-OMeTAD HTL (hole transport layer). These data reveal that the Spiro-OMeTAD solar cells could have been a good HTL (hole transport layer) in regards to producing SnS-based heterojunction solar cell with high efficiency and reduced cost.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

About the journal

Abstract

Keywords