Nature Communications (Aug 2024)

Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation

  • Furong Han,
  • Jing Zhang,
  • Fan Yang,
  • Bo Li,
  • Yu He,
  • Guansong Li,
  • Youxiang Chen,
  • Qisheng Jiang,
  • Yan Huang,
  • Hui Zhang,
  • Jine Zhang,
  • Huaiwen Yang,
  • Huiying Liu,
  • Qinghua Zhang,
  • Hao Wu,
  • Jingsheng Chen,
  • Weisheng Zhao,
  • Xian-Lei Sheng,
  • Jirong Sun,
  • Yue Zhang

DOI
https://doi.org/10.1038/s41467-024-51820-w
Journal volume & issue
Vol. 15, no. 1
pp. 1 – 9

Abstract

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Abstract The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film’s normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.