Electric and photoelectric properties of solid solutions Ag₂In₂Si(Ge)Se₆

Abstract

Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ single crystals are highresistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe₂-Si(Ge)Se₂ when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag₂In₂SiSe₆ and Ag₂In₂GeSe₆ respectively.Keywords: conductivity,Fermi level, activation energy, an amorphous semiconductor, photoconductivity.