RADIATION RESISTANCE SIMULATION OF LOGICAL CMOS INTEGRATED CIRCUITS ELEMENTS

Abstract

The software to simulate radiation resistance of MOSFET transistors, the basic elements of CMOS integrated circuits, is presented. The software performs visualization and analysis of volt-ampere characteristics of p - and n -channel transistors, extraction of «radiation sensitive» SPICE parameters and modeling of their variations with an ionizing radiation. The degradation of MOSFET transistors of the 1554LN1 microcircuit is investigated for gamma Co60 irradiation.

Keywords

• n- и p-канальные моп транзисторы
• spice-параметры