AIP Advances (Oct 2017)

Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation

  • Asir Intisar Khan,
  • Ishtiaque Ahmed Navid,
  • Maliha Noshin,
  • Samia Subrina

DOI
https://doi.org/10.1063/1.4997036
Journal volume & issue
Vol. 7, no. 10
pp. 105110 – 105110-11

Abstract

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Due to similar atomic bonding and electronic structure to graphene, hexagonal boron nitride (h-BN) has broad application prospects such as the design of next generation energy efficient nano-electronic devices. Practical design and efficient performance of these devices based on h-BN nanostructures would require proper thermal characterization of h-BN nanostructures. Hence, in this study we have performed equilibrium molecular dynamics (EMD) simulation using an optimized Tersoff-type interatomic potential to model the thermal transport of nanometer sized zigzag hexagonal boron nitride nanoribbons (h-BNNRs). We have investigated the thermal conductivity of h-BNNRs as a function of temperature, length and width. Thermal conductivity of h-BNNRs shows strong temperature dependence. With increasing width, thermal conductivity increases while an opposite pattern is observed with the increase in length. Our study on h-BNNRs shows considerably lower thermal conductivity compared to GNRs. To elucidate these aspects, we have calculated phonon density of states for both h-BNNRs and GNRs. Moreover, using EMD we have explored the impact of different vacancies, namely, point vacancy, edge vacancy and bi-vacancy on the thermal conductivity of h-BNNRs. With varying percentages of vacancies, significant reduction in thermal conductivity is observed and it is found that, edge and point vacancies are comparatively more destructive than bi-vacancies. Such study would contribute further into the growing interest for accurate thermal transport characterization of low dimensional nanostructures.