Nanoscale Research Letters (Jan 2009)

A Novel Method to Fabricate Silicon Nanowire <it>p</it>&#8211;<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping

  • K&#246;gler Reinhard,
  • Skorupa Wolfgang,
  • Kanungo PratyushDas,
  • Werner Peter,
  • G&#246;sele Ulrich

Journal volume & issue
Vol. 5, no. 1
pp. 243 – 246


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Abstract We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm−3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm−3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.