Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons

Abstract

Hall effect for single crystals of n-Ge, irradiated by various streams of electrons with an energy of 10 MeV is investigated. Taking into account the experimental results, the energy spectrum of radiation defects is found and their parameters are established. On the basis of solutions of electroneutrality equations systems, it is shown that the created radiation defects correspond to only two deep energy levels (Ec - 0.27) eV and (Ec + 0.27) eV. A slight change of energy position of these levels with irradiation dose increasing can be explained by internal mechanical stresses influence that arise in the germanium lattice around created radiation defects.

Keywords

• radiation defects
• deep levels
• internal stress
• single crystals of germanium