Integration Technology of Micro-LED for Next-Generation Display
Dingbo Chen,
Yu-Chang Chen,
Guang Zeng,
David Wei Zhang,
Hong-Liang Lu
Affiliations
Dingbo Chen
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China.
Yu-Chang Chen
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China.
Guang Zeng
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China.
David Wei Zhang
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China.
Hong-Liang Lu
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China.
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed.
